Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.018 Ω (Typ.)

文件：262.38 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：278.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET

文件：641.67 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175oc Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS= 100V Lower RDS(ON) : 0.018 Ω (Typ.)

文件：652 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175oc Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS= 100V Lower RDS(ON) : 0.018 Ω (Typ.)

文件：652 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体