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SSH7N60

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SSH7N60B

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SSH7N60A

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SSH7N60B

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

7N60

7.4Amps,600VoltsN-CHANNELMOSFET

■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

7N60

iscN-ChannelMosfetTransistor

•DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirem

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

7N60

7Amps竊?00VoltsN-ChannelMOSFET

■Description TheET7N60N-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. ■Features ●RDS(ON)=1.20Ω@VGS=10V ●Lowgatecha

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

ESTEK

7N60

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

7N60

7A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH

7N60

7A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH

7N60

7A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH

7N60

7A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH

7N60

7.4A,600VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

7N60

N-ChannelPowerMOSFET

DESCRIPTION TheNell7N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof7A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof600V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplications.suchasswitchedmodepowersu

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

7N60

600VN-ChannelPowerMOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC

7N60

N-CHANNELPOWERMOSFET

■DESCRIPTION 7N607N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswitch

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC

7N60

7Amps,600VoltsN-CHANNELMOSFET

FEATURE ●7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING

7N60

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

7N60

N-CHANNELPOWERMOSFET

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

7N60A

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

详细参数

  • 型号:

    SSH7N60

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    600V N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
N/A
3000
询价
仙童
06+
TO-247
3200
原装
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
VB
2019
TO-
55000
绝对原装正品假一罚十!
询价
FAIRCHILD/仙童
23+
TO-3P
10000
公司只做原装正品
询价
FSC
2022
TO-3P
20000
全新原装现货热卖
询价
FAIRCHILD/仙童
22+
3P
6000
十年配单,只做原装
询价
FAIRCHILD/仙童
22+
TO-3P
25000
只做原装进口现货,专注配单
询价
VBSEMI
19+
TO-
29600
绝对原装现货,价格优势!
询价
仙童
24+
TO-3P
12300
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
更多SSH7N60供应商 更新时间2024-4-27 16:00:00