| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SSH70N10 | Advanced Power MOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.018Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
Advanced Power MOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.018Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FastSwitchingSpeed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,69A,RDS(ON)=11mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,69A,RDS(ON)=11mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=45A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.023Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=57A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.023Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FQH70N10100VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.039Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
57A,100VHeatsinkPlanarN-ChannelPowerMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220 | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=57A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.023Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainSourceVoltage :VDSS=100V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号：
SSH70N10
- 制造商：
FAIRCHILD
- 制造商全称：
Fairchild Semiconductor
- 功能描述：
Advanced Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三星 |
N/A |
3360 |
询价 | ||||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FAI |
1738+ |
TO-3P |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
VB |
2019 |
TO-3P |
55000 |
绝对原装正品假一罚十! |
询价 | ||
F |
23+ |
TO-3P |
10000 |
公司只做原装正品 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
3P |
6000 |
十年配单,只做原装 |
询价 | ||
FAIRCHILD/仙童 |
3P |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
F |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VBSEMI |
19+ |
TO-3P |
29600 |
绝对原装现货,价格优势! |
询价 | ||
FAIRCHILD |
1436+ |
T0-3P |
30000 |
绝对原装进口现货可开增值税发票 |
询价 |
相关规格书
更多- SSH70N10A
- SSH7N60
- SSH7N60B
- SSH7N90
- SSH80N06A
- SSH8N80A
- SSH9N80A
- SSHA04024SN-C
- SSHA06016SN-C
- SSHA06032SN-C
- SSHA08024SN-C
- SSHL-003GA1-P0.2
- SSHL-003GA1-P0.2-150SB
- SSHL-003GA1-P0.2-150SW
- SSHL-003GA1-P0.2-150WR
- SSHL-003GA1-P0.2-300SB
- SSHL-003GA1-P0.2-300SW
- SSHS-103-D-02-GT
- SSHS-105-D-02-GT
- SSHS-105-S-02-G-LF
- SSHS-106-D-04-T-LF
- SSHS-106-S-02-T-LF
- SSI10N60BTU
- SSI117-4CP
- SSI1N50A
- SSI1N50BTU
- SSI1N60B
- SSI201
- SSI203
- SSI20C89
- SSI213
- SSI22101
- SSI22106
- SSI22301
- SSI-263A
- SSI291
- SSI2N60B
- SSI2N80A
- SSI32B451-CH
- SSI32C9022-CG
- SSI32C9023-CG
- SSI32C9024-CG
- SSI32C9210CGT
- SSI32R104C-F
- SSI32R104CLM
相关库存
更多- SSH7N55
- SSH7N60A
- SSH7N80A
- SSH7N90A
- SSH8N55
- SSH8N90A
- SSH9N90A
- SSHA04032SN-C
- SSH-A06-024-SN
- SSHA06048SN-C
- SSHA08032SN-C
- SSHL-003GA1-P0.2/LF/SN
- SSHL-003GA1-P0.2-150SR
- SSHL-003GA1-P0.2-150WB
- SSHL-003GA1-P0.2-150WW
- SSHL-003GA1-P0.2-300SR
- SSHS-102-S-02-G-LF
- SSHS-103-D-02-H-LF
- SSHS-105-D-02-GT-LF
- SSHS-106-D-04-G-LF
- SSHS-106-S-02-G-LF
- SSI10N60B
- SSI117-2CP
- SSI122
- SSI1N50B
- SSI1N60A
- SSI1N60BTU
- SSI202
- SSI204
- SSI20C90
- SSI22100
- SSI22102
- SSI223
- SSI263A
- SSI263AIP
- SSI2N60A
- SSI2N60BTU
- SSI2N90A
- SSI32C9020-CG
- SSI32C9022-CGT
- SSI32C9023-CGT
- SSI32C9024-CGT
- SSI32R104C-CL
- SSI32R104CL
- SSI32R104CM
