600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：686.47 Kbytes 页数：9 Pages

FAIRCHILD

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600V N-Channel MOSFET

ONSEMI

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600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：909.24 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10817 Mbytes 页数：10 Pages

VBSEMI

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Advanced Power MOSFET

BVDSS= 600 V RDS(on) = 0.8Ω ID= 9 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25µA(Max.) @ VDS= 600V Low RDS(ON) : 0.646 (Typ.)

文件：639.49 Kbytes 页数：7 Pages

FAIRCHILD

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