Advanced Power MOSFET

BVDSS= 600 V RDS(on) = 0.8Ω ID= 9 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25µA(Max.) @ VDS= 600V Low RDS(ON) : 0.646 (Typ.)

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