520V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：629.48 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：279.94 Kbytes 页数：2 Pages

ISC

无锡固电

520V N-Channel MOSFET

ONSEMI

安森美半导体

N-CHANNEL POWER MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 500V ■ Lower RDS(ON) : 4.046 Ω(Typ.)

文件：265.7 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08835 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件：321.21 Kbytes 页数：2 Pages

ISC

无锡固电