improved inductive ruggedness

文件：296.34 Kbytes 页数：5 Pages

SAMSUNG

三星

isc N-Channel MOSFET Transistor

文件：279.65 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhanced mode TO-251/TO-252/TO-220F MOSFET

文件：1.09998 Mbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel Enhancement mode TO-220F/TO-251/TO-252 MOSFET

文件：744.95 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 0.8Ω)@VGS=10V  Low Gate Charge (Typ 18nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED,Charge, Adaptor General Description This power MOSFET is produced with advanced super junction technology of SAMWIN. This techno

文件：1.05236 Mbytes 页数：7 Pages

SEMIPOWER

芯派科技