N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA (Max.) @ VDS= 900V • Lower RDS(ON): 1.247Ω(Typ.)

文件：246.12 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

文件：272.99 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFETFEATURES\n• Avalanche Rugged Technology\n• Rugged Gate Oxide Technology\n• Lower Input Capacitance\n• Improved Gate Charge\n• Extended Safe Operating Area\n• Lower Leakage Current: 25µA (Max.) @ VDS= 900V\n• Lower RDS(ON): 1.247Ω(Typ.) • Avalanche Rugged Technology\n• Rugged Gate Oxide Technology\n• Lower Input Capacitance\n• Improved Gate Charge\n• Extended Safe Operating Area\n• Lower Leakage Current: 25µA (Max.) @ VDS= 900V\n• Lower RDS(ON): 1.247Ω(Typ.);

ONSEMI

安森美半导体

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is

文件：510.23 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is

文件：510.23 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

900V N-Channel Power MOSFET

文件：410.78 Kbytes 页数：10 Pages

TSC

台湾半导体