丝印：50N；Package：SOT-23；FIXED 2.5 AND 5 VOLT 3-TERMINAL VOLTAGE REFERENCES

文件：98.74 Kbytes 页数：6 Pages

ZETEX

丝印：50N；Package：SOT-89；FIXED 2.5 AND 5 VOLT 3-TERMINAL VOLTAGE REFERENCES

文件：98.74 Kbytes 页数：6 Pages

ZETEX

丝印：50N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =50A RDS(ON),12mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

文件：1.25018 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：50N10AL；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@20A

文件：416.37 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：50N10SA；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：488.55 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：50N200；Package：TO-263；200V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100 UIS tested EnhancedAvalanche Ruggedness Pb-free lead plating

文件：793.53 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：50N200；Package：TO-220；200V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100 UIS tested EnhancedAvalanche Ruggedness Pb-free lead plating

文件：793.53 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：50N200；Package：TO-247；200V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100 UIS tested EnhancedAvalanche Ruggedness Pb-free lead plating

文件：793.53 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：50N200；Package：TO-220F；200V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100 UIS tested EnhancedAvalanche Ruggedness Pb-free lead plating

文件：735.23 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：50N250；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =250V,ID =50A RDS(ON)

文件：346.37 Kbytes 页数：7 Pages

RECTRON

丽正国际