丝印：50N02TFXXXYY；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF50N02 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) @4.5V (typ) ID 20V 5.1mΩ 50A ● High density cell design for ultra low Rdson ● Fully

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