丝印：50N02TFXXXYY；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF50N02 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) @4.5V (typ) ID 20V 5.1mΩ 50A ● High density cell design for ultra low Rdson ● Fully

文件：4.82419 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Application 3.3V MCU Drive Load switch Uninterruptible power supply

文件：1.61742 Mbytes 页数：5 Pages

YFWDIODE

佑风微

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Application 3.3V MCU Drive Load switch Uninterruptible power supply

文件：1.6082 Mbytes 页数：5 Pages

YFWDIODE

佑风微

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 20V RDSON (MAX.) 45mΩ ID 3.6A Pb‐Free Lead Plating & Halogen Free

文件：190.89 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

N-Channel Logic Level Enhancement Mode Field Effect Transistor

[Niko-Sem] N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 (D PAK)

文件：44.28 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：45.18 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商