丝印：TF50N06；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .This device is ideal for load switch and battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minim

文件：2.37786 Mbytes 页数：5 Pages

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文件：1.29378 Mbytes 页数：6 Pages

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