丝印：TF60N03；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF60N03 combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize

文件：3.48219 Mbytes 页数：6 Pages

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丝印：TF60N03S；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF60N03S combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON).This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize

文件：3.90379 Mbytes 页数：6 Pages

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