丝印：50N；Package：SOT-23；FIXED 2.5 AND 5 VOLT 3-TERMINAL VOLTAGE REFERENCES

文件：98.74 Kbytes 页数：6 Pages

Zetex

丝印：50N；Package：SOT-89；FIXED 2.5 AND 5 VOLT 3-TERMINAL VOLTAGE REFERENCES

文件：98.74 Kbytes 页数：6 Pages

Zetex

丝印：50N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =50A RDS(ON),12mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

文件：1.25018 Mbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：50N65FL2；Package：TO-247；IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

文件：349.62 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：50NW；Package：WDFN8；MOSFET- Power, Single N-Channel 80 V, 9.5 m, 68 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：204.83 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：50N10AL；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@20A

文件：416.37 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：50N10SA；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：488.55 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：50N200；Package：TO-263；200V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100 UIS tested EnhancedAvalanche Ruggedness Pb-free lead plating

文件：793.53 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：50N200；Package：TO-220；200V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100 UIS tested EnhancedAvalanche Ruggedness Pb-free lead plating

文件：793.53 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：50N200；Package：TO-247；200V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100 UIS tested EnhancedAvalanche Ruggedness Pb-free lead plating

文件：793.53 Kbytes 页数：9 Pages

RECTRON

丽正国际