isc N-Channel MOSFET Transistor

文件：320.14 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL POWER MOSFET

文件：2.9565 Mbytes 页数：9 Pages

SUNMATE

森美特

4A mps,650 Volts N-CHANNEL MOSFET

文件：201.07 Kbytes 页数：2 Pages

CHONGQING

平伟实业

N-CHANNEL POWER MOSFET

文件：607.6 Kbytes 页数：7 Pages

ZSELEC

淄博圣诺

4A , 650V N-CHANNEL    POWER MOSFET

The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, • RDS(ON) = 2.5 Ω @VGS = 10 V \n• Ultra Low Gate Charge ( typical 15 nC )   \n• Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) \n• Fast Switching Capability \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

UTC

友顺

丝印：4N65；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

文件：1.96573 Mbytes 页数：11 Pages

RECTRON

丽正

丝印：4N65；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

文件：1.96573 Mbytes 页数：11 Pages

RECTRON

丽正

丝印：4N65；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

文件：1.96573 Mbytes 页数：11 Pages

RECTRON

丽正

丝印：4N65；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

文件：1.96573 Mbytes 页数：11 Pages

RECTRON

丽正

650V N-Channel Planar MOSFET

Features EMI and perfomance balanced Fast switching capability 100% avalanch tested Improved dv/dt capability

文件：5.37773 Mbytes 页数：9 Pages

SY

顺烨电子