650V N-Channel Planar MOSFET

Description 650V N-Channel Planar MOSFET 4N65 is high voltage MOSFET family based on advanced planar stripe DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device famil

文件：5.37773 Mbytes 页数：9 Pages

SHUNYE

顺烨电子

丝印：4N65AEP；Package：TO-220；650V N-Channel Planar MOSFET

Features EMI and perfomance balanced Fast switching capability 100% avalanch tested Improved dv/dt capability

文件：5.37773 Mbytes 页数：9 Pages

SY

顺烨电子

N-channel power MOS tube

Features * VDS (V)=650V * RDS(ON) ≤ 2.7 (VGS = 10V) * ID=4.0A

文件：809.38 Kbytes 页数：9 Pages

UMW

友台半导体

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

文件：390.7 Kbytes 页数：8 Pages

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

文件：390.7 Kbytes 页数：8 Pages

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

文件：390.7 Kbytes 页数：8 Pages

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

文件：390.7 Kbytes 页数：8 Pages

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

文件：390.7 Kbytes 页数：8 Pages

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

文件：390.7 Kbytes 页数：8 Pages

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

文件：390.7 Kbytes 页数：8 Pages

UTC

友顺