Standard Recovery Diodes (Stud and Lead Type)

文件：120.16 Kbytes 页数：2 Pages

NAINA

Phase Control Thyristors (Stud & Lead Type), 40A

文件：173.7 Kbytes 页数：2 Pages

NAINA

丝印：40NP2815G；Package：DFN5X6-8L；NCE N&P-Channel complementary Power MOSFET

Description The NCE40NP2815G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =40V,ID =28A RDS(ON)

文件：988.33 Kbytes 页数：11 Pages

NCEPOWER

新洁能

丝印：40N120FL2；Package：TO-247；IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

文件：288.15 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：40N120FL3；Package：TO-247；IGBT - Ultra Field Stop

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and sol

文件：316.44 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：40N120FL；Package：TO-247；IGBT

Features • Low Saturation Voltage using NPT Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • 10 s Short Circuit Capability • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Solar Inverter • UPS

文件：194.63 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：40N200；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

General Features VDS =200V,ID =40A RDS(ON)

文件：203.4 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：40N40；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =40V,ID =40A RDS(ON)

文件：262.84 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：40N40；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =40V,ID =42A RDS(ON)

文件：265.87 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：40N600；Package：TO-247-3L；600V, 40A, Trench FS II IGBT

Features Trench FSII Technology offering Very low VCE（sat） High speed switching Positive temperature coefficient in VCE（sat） Very tight parameter distribution High ruggedness, temperature stable behavior

文件：1.02671 Mbytes 页数：7 Pages

RECTRON

丽正国际