丝印：40N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =40A RDS(ON),14mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

文件：1.20806 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：40N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The 40N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =40A RDS(ON),14mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.49171 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

Low Gate Charge Simple Drive Requirement

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applica

文件：106.24 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N CHANNEL ENHANCEMENT MODE POWER MOSFET

Power MOSFETs from Silicon Standardprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widelypreferred for commercialand industrial applications and suited for low voltage applications su

文件：128.75 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • DC/DC Conversion - System Power

文件：1.30229 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N CHANNEL ENHANCEMENT MODE POWER MOSFET

Power MOSFETs from Silicon Standardprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widelypreferred for commercialand industrial applications and suited for low voltage applications su

文件：128.75 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Fast Switching

FEATURES • Drain Current ID= 40A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) • Fast Switching APPLICATIONS • Switching power supplies,converters, AC and DC motor controls

文件：68.08 Kbytes 页数：2 Pages

ISC

无锡固电

40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：194.01 Kbytes 页数：2 Pages

CHONGQING

平伟实业

40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：194.01 Kbytes 页数：2 Pages

CHONGQING

平伟实业

40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：194.01 Kbytes 页数：2 Pages

CHONGQING

平伟实业