We are Dedicated to Achieving Customer Satisfaction Through Continuous Improvement

文件：2.45415 Mbytes 页数：164 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

We are Dedicated to Achieving Customer Satisfaction Through Continuous Improvement

文件：2.45415 Mbytes 页数：164 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TERMINAL, RING TONGUE, PLASTI-GRIP WIRE SIZE

文件：38.6 Kbytes 页数：1 Pages

MACOM

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes 页数：1 Pages

Heyco

9V P-channel MOS FET

文件：161.74 Kbytes 页数：2 Pages

FUMAN

富满微

丝印：3415E；Package：SOT-23；MOSFET

Features - ESD protection up to 2kV(Human body mode). - Electrostatic sensitive devices. - AEC-Q101 Qualified. - Parallel use is easy. - High-speed switching. - Drive circuits can be simple.

文件：492.28 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：3415A；Package：SOT-23；P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-5 A (VGS =-4.5V) ● RDS(ON)

文件：462.83 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：3415EX；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON)

文件：247.15 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：3415Y；Package：SOT-23-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON)

文件：268.87 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：3415T；Package：10LdMSOP；Single, Low Voltage Digitally Controlled Potentiometer (XDCP??

文件：1.11431 Mbytes 页数：20 Pages

RENESAS

瑞萨