丝印：3404B；Package：3404B；30V N-Channel Enhancement Mode MOSFET

Description The DMG3402LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.52747 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description The DMN3028LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.52747 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description The IRLML0030 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.52747 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The IRLML6346 uses advanced trench technology General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.52748 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description The NVTR4503N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.52746 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV15ENEA General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.57297 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV19XNEA General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.52751 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology Si2300DS General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.5275 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description The SQ2348ES uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.52746 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3404B；Package：3404B；30V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Lithium battery protection Wireless impact Mobile phone fast charging

文件：1.82526 Mbytes 页数：5 Pages

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