丝印：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The IRLML6346 uses advanced trench technology General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.52748 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

N-Channel MOSFET

Features VDS (V) = 30V RDS(ON)

文件：374.17 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

30V 单 N 通道 StrongIRFET ™功率 MOSFET，采用 SOT-23 封装

\n优势:\n• 符合 RoHS\n• 符合行业标准的引脚\n• 与现有表面封装技术兼容\n• MSL1 合格\n• SOT-23 封装\n \n  ;

Infineon

英飞凌

N-Channel MOSFET

Application(s) Load/ System Switch Features VDS (V) = 30V RDS(ON) 63m (VGS = 4.5V) RDS(ON) 80m (VGS = 2.5V)

文件：461.07 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：VBR6N；Package：SOT-23；N-Channel MOSFET

Features VDS (V) = 30V RDS(ON)

文件：374.17 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

文件：218.49 Kbytes 页数：10 Pages

IRF

RoHS compliant containing no lead, no bromide and no halogen

文件：218.49 Kbytes 页数：10 Pages

IRF

RoHS compliant containing no lead, no bromide and no halogen

文件：218.49 Kbytes 页数：10 Pages

IRF

HEXFETPower MOSFET

文件：218.49 Kbytes 页数：10 Pages

IRF

HEXFETPower MOSFET

文件：223.09 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品