丝印：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV19XNEA General Features VDS = 30V ID =4.2A RDS(ON)

文件：2.52751 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：R3；Package：TO-236AB；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Extended temperature range Tj = 175 °C • Trench MOSFET

文件：295.02 Kbytes 页数：15 Pages

NEXPERIA

安世

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

NEXPERIA

安世

30 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Low threshold voltage\n• Extended temperature range Tj = 175 °C\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B)\n• AEC-Q101 qualified;

Nexperia

安世