Silicon N-Channel MOS FET (HF/VHF power amplifier)

Features · High breakdown voltage · You can decrease handling current. · Included gate protection diode · No secondary–breakdown · Wide area of safe operation · Simple bias circuitry · No thermal runaway Application HF/VHF power amplifier

文件：50.65 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

SILICON N-CHANNEL MOS FET

DESCRIPTION: The ASI 2SK410 is a silicon n-channel mos fet designed for HF/VHF power amplifier applications. FEATURES: • PG = 17 dB typ. at 100 W/28 MHz • Omnigold™ Metalization System • Common Source configuration • RoHS compliant

文件：31.63 Kbytes 页数：1 Pages

ASI

N-Channel Silicon MOSFET General-Purpose Switching Device

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.

文件：56.16 Kbytes 页数：5 Pages

SANYO

三洋

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.

文件：327.73 Kbytes 页数：6 Pages

SANYO

三洋

丝印：K4101；Package：TO-220F-3FS；General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features •Low ON-resistance. •High-speed switching. •10V drive. • Avalanche resistance guarantee.

文件：274.1 Kbytes 页数：5 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.

文件：56.53 Kbytes 页数：5 Pages

SANYO

三洋

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：181.8 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

Switching Regulator Applications • Low drain−source ON resistance : RDS(ON) = 0. 33 Ω(typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.) • Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) • Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：268.5 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝