SILICON N CHANNEL MPS TYPE (7T-MOS)

HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES . High Breakdown Voltage : V(gR) Dg S =450V . High Forward Transfer Admittance : ]Yf s |=2.5S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V lDSS=lmA(

文件：47.58 Kbytes 页数：1 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：317.05 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ

文件：342.99 Kbytes 页数：9 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：330.83 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4212A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 8.0

文件：262.61 Kbytes 页数：9 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4212A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 8.0

文件：262.61 Kbytes 页数：9 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4212A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 8.0

文件：262.61 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ

文件：342.99 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ

文件：342.99 Kbytes 页数：9 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 m

文件：342.26 Kbytes 页数：9 Pages

RENESAS

瑞萨