isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

General-Purpose Switching Device Applications

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SANYO

三洋

General-Purpose Switching Device Applications

ONSEMI

安森美半导体

SOT

NEC

瑞萨

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SOT-23

TOSHIBA/东芝

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