TECHNICAL DATA

文件：325.18 Kbytes 页数：6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：328.09 Kbytes 页数：2 Pages

ISC

无锡固电

2SK447

文件：42.52 Kbytes 页数：1 Pages

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TECHNICAL DATA

Toshiba

东芝