2SK579L数据表ic资料供应代理无锡固电-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SK579L	文件：49.79 Kbytes Page：1 Pages	HIGH SPEED POWER SWITCHING HIGH SPEED POWER SWITCHING 文件：49.79 Kbytes 页数：1 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK579L	文件：398 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- 文件：398 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
2SK579S	文件：49.79 Kbytes Page：1 Pages	HIGH SPEED POWER SWITCHING HIGH SPEED POWER SWITCHING 文件：49.79 Kbytes 页数：1 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK579S	文件：1.08682 Mbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET 文件：1.08682 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
2SK579S	文件：330.15 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- 文件：330.15 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多2SK579L供应商更新时间2026-4-18 16:30:00