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2SK580

HIGH SPEED POWER SWITCHING

HIGH SPEED POWER SWITCHING

文件:49.79 Kbytes 页数:1 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SK580

N-Channel 650 V (D-S) MOSFET

文件:1.08588 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

2SK580L

HIGH SPEED POWER SWITCHING

HIGH SPEED POWER SWITCHING

文件:49.79 Kbytes 页数:1 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SK580L

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件:398.15 Kbytes 页数:2 Pages

ISC

无锡固电

2SK580S

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件:330.29 Kbytes 页数:2 Pages

ISC

无锡固电

2SK580S

HIGH SPEED POWER SWITCHING

HIGH SPEED POWER SWITCHING

文件:49.79 Kbytes 页数:1 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SK580S

N-Channel 650 V (D-S) MOSFET

文件:1.08588 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

详细参数

  • 型号:

    2SK580

  • 制造商:

    HITACHI

  • 制造商全称:

    Hitachi Semiconductor

  • 功能描述:

    HIGH SPEED POWER SWITCHING

供应商型号品牌批号封装库存备注价格
HITACHI/日立
25+
TO-252251
45000
HITACHI/日立全新现货2SK580即刻询购立享优惠#长期有排单订
询价
1415+
TO-252
28500
全新原装正品,优势热卖
询价
INFINEON/英飞凌
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
询价
R
22+
DPAK
6000
十年配单,只做原装
询价
HITACHI
2023+环保现货
TO-252
18000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
HITACHI
23+
2800
正品原装货价格低
询价
HITACHI
2023+
TO-252
50000
原装现货
询价
HITACHI
24+
TO-252
3100
只做原装正品现货 欢迎来电查询15919825718
询价
RENESAS/瑞萨
22+
TO-252
20000
只做原装
询价
24+
30000
询价
更多2SK580供应商 更新时间2026-1-17 9:04:00