HIGH SPEED POWER SWITCHING

HIGH SPEED POWER SWITCHING

文件：49.79 Kbytes 页数：1 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：330.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件：1.08588 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08588 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

HIGH SPEED POWER SWITCHING

HIGH SPEED POWER SWITCHING

文件：49.79 Kbytes 页数：1 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：398.15 Kbytes 页数：2 Pages

ISC

无锡固电