SILICON C-CHANNEL MOSFET HIGH SPEED POWER SWITCHING

[Hitachi] SILICON N-CHANNEL MOS FET HGIH SPEED POWER SWITCHING FEATURES ● Low On-Resistance. (RON = 0.55Ω) ● High Speed Switching ● High Voltage (VDSS = 500V) ● No Secondary Breakdown ● Suitable for Switching Regulator, DC-DC Converters, and Motor Control.

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

SILICON N-CHANNEL MOS FET

HITACHI

日立

TO-92S

TOSHIBA/东芝

上传：深圳广友电子有限公司

TO-92S

TOSHIBA/东芝

上传：深圳广友电子有限公司