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2SK429

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HGH SPEED POWER SWITCHING

文件:48.45 Kbytes 页数:1 Pages

HitachiHitachi Semiconductor

日立日立公司

2SK429

Fast Switching Speed

文件:34.68 Kbytes 页数:2 Pages

ISC

无锡固电

2SK429

HIGH SPEED POWER SWITCHING

HITACHI

日立

2SK429L

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件:398.74 Kbytes 页数:2 Pages

ISC

无锡固电

2SK429L

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HGH SPEED POWER SWITCHING

文件:48.45 Kbytes 页数:1 Pages

HitachiHitachi Semiconductor

日立日立公司

2SK429S

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HGH SPEED POWER SWITCHING

文件:48.45 Kbytes 页数:1 Pages

HitachiHitachi Semiconductor

日立日立公司

2SK429S

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件:330.89 Kbytes 页数:2 Pages

ISC

无锡固电

2SK429L

N-Channel 100-V (D-S) MOSFET

文件:1.035579 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

详细参数

  • 型号:

    2SK429

  • 制造商:

    HITACHI

  • 制造商全称:

    Hitachi Semiconductor

  • 功能描述:

    HIGH SPEED POWER SWITCHING

供应商型号品牌批号封装库存备注价格
24+
60000
询价
VBSEMI/台湾微碧
23+
TO252
50000
全新原装正品现货,支持订货
询价
R
22+
DPAK
6000
十年配单,只做原装
询价
HIT
2023+
DPAK
50000
原装现货
询价
VBSEMI/台湾微碧
24+
TO252
60000
询价
NEC
24+
TO-252
30000
只做正品原装现货
询价
日立
24+
TO-262/263
6430
原装现货/欢迎来电咨询
询价
RENESAS/瑞萨
2447
SOT252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
HITACHI/日立
23+
TO-252
15000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
RENESAS
18+
SOT252
2500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多2SK429供应商 更新时间2025-11-19 16:30:00