HIGH SPEED POWER SWITCHING

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HITACHIHitachi Semiconductor

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HGH SPEED POWER SWITCHING

文件：48.45 Kbytes 页数：1 Pages

HITACHIHitachi Semiconductor

日立日立公司

N-Channel 100-V (D-S) MOSFET

文件：1.035579 Mbytes 页数：9 Pages

VBSEMI

微碧半导体