Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Switching Regulator Applications

Switching Regulator Applications • Low drain−source ON resistance : RDS(ON) = 0. 33 Ω(typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.) • Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) • Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：268.5 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件：246.57 Kbytes 页数：6 Pages

TOSHIBA

东芝

THINKISEMI 15A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs

文件：1.31398 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

N-Channel Power MOSFET

文件：344.05 Kbytes 页数：6 Pages

NELLSEMI

尼尔半导体

Power MOSFET (N-ch 250V VDSS 500V)

Polarity：N-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 日本 Drain current ID 15 A \nPower Dissipation PD 150 W \nDrain-Source voltage VDSS 500 V ;

Toshiba

东芝

Switching Regulator Applications

文件：246.57 Kbytes 页数：6 Pages

TOSHIBA

东芝