isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：316.86 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.34Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：316.83 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：324.32 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

文件：304.65 Kbytes 页数：5 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

文件：304.66 Kbytes 页数：5 Pages

SANYO

三洋

General-Purpose Switching Device Applications

文件：275.62 Kbytes 页数：5 Pages

SANYO

三洋

MOSFET N-CH 600V 23A TO-3PB

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

ONSEMI

安森美半导体