Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：64.17 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.71 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：64.17 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, · Half Bridge · PFC and Other Boost Converter · Buck Converterh

文件：306.73 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.71 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：51.57 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.11 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.11 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：1.01214 Mbytes 页数：10 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =130mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

文件：27.43 Kbytes 页数：4 Pages

HitachiHitachi Semiconductor

日立日立公司