Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：87.3 Kbytes 页数：8 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：50.8 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：87.3 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance\n   RDS =0.055 Ω typ.\n• High speed switching\n• 4 V gate drive device can be driven from 5 V source;

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