Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：128.13 Kbytes 页数：9 Pages

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Transistors>Switching/MOSFETs

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