SILICON N CHANNEL MOSFET HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

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HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

文件：332.82 Kbytes 页数：2 Pages

ISC

无锡固电

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching.

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SANYO

三洋

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR APPLICATIONS)

Chopper Regulator Applications ● Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) ● High forward transfer admittance : |Yfs| = 8.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 400 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：291.75 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS(ON) = 0.31 Ω(typ.) ● High forward transfer admittance : |Yfs| = 15 S (typ.) ● Low leakage current : IDSS= 100 μA (max) (VDS= 600 V) ● Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID=

文件：301.88 Kbytes 页数：5 Pages

TOSHIBA

东芝

Power MOSFET

1. Scope This specifies Fuji Power MOSFET 2SK2954-MR 2. Construction N-channel enhancement mode power MOSFET 3. Application for switching 4. Outview TO-220F Outview See to 4/10 page

文件：192.56 Kbytes 页数：10 Pages

FUJI

富士通

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.010 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source

文件：51.91 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.010 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：88.73 Kbytes 页数：8 Pages

RENESAS

瑞萨