丝印：NX；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as

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RENESAS

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MOS Field Effect Transistor

■ Features ● VDS (V) = 60V ● ID = 4 A ● RDS(ON)

文件：44.95 Kbytes 页数：1 Pages

KEXIN

科信电子

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices

文件：1.01913 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features ● Directly driven by a 4.0 V power source. ● Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A)

文件：196.87 Kbytes 页数：8 Pages

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N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features ● Directly driven by a 4.0 V power source. ● Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A)

文件：196.87 Kbytes 页数：8 Pages

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瑞萨

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features ● Directly driven by a 4.0 V power source. ● Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A)

文件：196.87 Kbytes 页数：8 Pages

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N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 4 A ● RDS(ON)

文件：1.24782 Mbytes 页数：4 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.5 V power source. The 2SK2858 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEAT

文件：311.31 Kbytes 页数：7 Pages

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瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.5-V power source. The 2SK2858 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5-V power source • Low gate cu

文件：50.82 Kbytes 页数：8 Pages

NEC

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N-Channel Enhancement Mode MOSFET

Features © Lowonresistance © ESD protected gate up to 2KV HBM © High-speed switching © Drive circuits can be simple. © Parallel use is easy

文件：1.66315 Mbytes 页数：5 Pages

TECHPUBLIC

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