N-Channel Enhancement Mode Power MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

文件：258.829 Kbytes 页数：12 Pages

Fuji

富士通

N-Channel Enhancement Mode Power MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

文件：258.829 Kbytes 页数：12 Pages

Fuji

富士通

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4 V gate drive devices. • Large current capacitance ID = 5 A

文件：206.81 Kbytes 页数：10 Pages

RENESAS

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A

文件：50.28 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4 V gate drive devices. • Large current capacitance ID = 5 A

文件：206.81 Kbytes 页数：10 Pages

RENESAS

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N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATIONS)

UHF BAND AMPLIFIER APPLICATION (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in thisdocument

文件：107.37 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATION)

UHF BAND AMPLIFIER APPLICATION (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document e

文件：107.45 Kbytes 页数：2 Pages

TOSHIBA

东芝

N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

UHF BAND LOW NOISE AMPLIFIER APPLICATIONS ● Low Noise Figure : NF = 0.7dB (f=1.5GHz) ● High Gain : Ga = 21.5dB (f=1.5GHz)

文件：235.31 Kbytes 页数：4 Pages

TOSHIBA

东芝

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver. FEATURES • Can be driven by a 5V power so

文件：62.65 Kbytes 页数：8 Pages

NEC

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