Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A

文件：50.28 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4 V gate drive devices. • Large current capacitance ID = 5 A

文件：206.81 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

HITACHI

日立

Power MOSFETs

Renesas

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4 V gate drive devices. • Large current capacitance ID = 5 A

文件：206.81 Kbytes 页数：10 Pages

RENESAS

瑞萨