N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.5-V power source. The 2SK2858 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5-V power source • Low gate cu

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NEC

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MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.5 V power source. The 2SK2858 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEAT

文件：311.31 Kbytes 页数：7 Pages

RENESAS

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Power MOSFETs-Power MOSFETs for Automotive

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N-Channel Enhancement Mode MOSFET

Features © Lowonresistance © ESD protected gate up to 2KV HBM © High-speed switching © Drive circuits can be simple. © Parallel use is easy

文件：1.66315 Mbytes 页数：5 Pages

TECHPUBLIC

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场效应管(MOSFET)

Techpublic

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