N-Channel Enhancement Mode MOSFET

Features © Lowonresistance © ESD protected gate up to 2KV HBM © High-speed switching © Drive circuits can be simple. © Parallel use is easy

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TECHPUBLIC

台舟电子

场效应管(MOSFET)

Techpublic

台舟电子

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.5 V power source. The 2SK2858 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEAT

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RENESAS

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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.5-V power source. The 2SK2858 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5-V power source • Low gate cu

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NEC

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