2SK2869STL-E数据手册原装现货瑞萨RENESAS-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SK2869STL-E	文件：95.34 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：95.34 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK2869-ZJ	文件：1.46629 Mbytes Page：5 Pages	N-Channel MOSFET 文件：1.46629 Mbytes 页数：5 Pages	KEXIN 科信电子	KEXIN
2SK2869	文件：52.81 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source 文件：52.81 Kbytes 页数：10 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK2869	文件：45.22 Kbytes Page：1 Pages	N-Channel Silicon MOSFET Features ● Low on-resistance RDS = 0.033 Ω typ. ● High speed switching ● 4V gate drive device can be driven from 5V source 文件：45.22 Kbytes 页数：1 Pages	KEXIN 科信电子	KEXIN
2SK2869	文件：95.34 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：95.34 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

更多2SK2869STL-E供应商更新时间2026-4-21 14:49:00