N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features ● Directly driven by a 4.0 V power source. ● Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A)

文件：196.87 Kbytes 页数：8 Pages

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N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features ● Directly driven by a 4.0 V power source. ● Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A)

文件：196.87 Kbytes 页数：8 Pages

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N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features ● Directly driven by a 4.0 V power source. ● Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A)

文件：196.87 Kbytes 页数：8 Pages

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Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4. 0 V power source. • Directly driven by a 4.0 V power source.\n• Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A);

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