N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)

For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
 High breakdown voltage: VGDS= −50 V
 High input impedance: IGSS= −1nA (max) (VGS= −30 V)

文件：163.12 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon N Channel Junction Type For Constant Current, Impedance

文件：426.94 Kbytes 页数：4 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications

Toshiba

东芝

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 80 mW MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 W MAX. (@ VGS = 4 V, ID = 10 A)

文件：218.93 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A) • Low Ciss Ciss = 1400 pF TYP. • Built-in G-S Ga

文件：114.98 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2462 is N-Channel MOS Field Effect Transistor de signed for high current switching applications. FEATURES • Low On-Resistance RDS(on)1= 0.14 ΩMAX. (@ VGS= 10 V, ID= 8.0 A) RDS(on)2= 0.17 ΩMAX. (@ VGS= 4 V, ID= 8.0 A)

文件：114.96 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2462 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-Resistance RDS(on)1 = 0.14 W MAX. (@ VGS = 10 V, ID = 8.0 A) RDS(on)2 = 0.17 W MAX. (@ VGS = 4 V, ID =

文件：250.75 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.48 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：T100；Package：MPT3；Small switching (60V, 2A)

● Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel.

文件：137.67 Kbytes 页数：4 Pages

ROHM

罗姆

Ultrahigh-Speed Switching Applications

Features · Low ON resistance. · Ultrahigh-speed switching. · Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package.

文件：37.65 Kbytes 页数：3 Pages

SANYO

三洋