SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A) • Low Ciss Ciss = 1400 pF TYP. • Built-in G-S Ga

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 80 mW MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 W MAX. (@ VGS = 4 V, ID = 10 A)

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDESCRIPTION\nThe 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.\nFEATURES\n• Low On-Resistance\n  RDS(on)1= 80 mΩMAX. (@ VGS= 10 V, ID= 10 A)\n  RDS(on)2= 0.1 ΩMAX. (@ VGS= 4 V, ID= 10 A)\n• Low CissCis • Low On-Resistance\n  RDS(on)1= 80 mΩMAX. (@ VGS= 10 V, ID= 10 A)\n  RDS(on)2= 0.1 ΩMAX. (@ VGS= 4 V, ID= 10 A)\n• Low CissCiss= 1400 pF TYP.\n• Built-in G-S Gate Protection Diodes\n• High Avalanche Capability Ratings;

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