SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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RENESAS

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5.0A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

MOS Field Effect Transistors

MOS Field Effect Transistors Features Low On-state Resistance:RDS(on)=2.8Ω max.(VGS=10V,ID=3.0A) Low Ciss Ciss=1200pF TYP High Avalanche Capability Ratings

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KEXIN

科信电子

isc N-Channel MOSFET Transistor

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ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

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