丝印：K2503；Package：SOT-428；Small switching (60V, 5A)

Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

文件：135.78 Kbytes 页数：4 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.135Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.09 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOSFET

Features ● Low on-resistance. ● Fast switching speed. ● Wide SOA (safe operating area). ● Easily designed drive circuits. ● Easy to parallel.

文件：43.14 Kbytes 页数：1 Pages

KEXIN

科信电子

N-Channel 60 V (D-S) MOSFET

文件：1.0029 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件：378.14 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：K2503；Package：SOT-428；4V Drive Nch MOS FET

文件：97.54 Kbytes 页数：6 Pages

ROHM

罗姆

Transistors > MOS FET > Power MOS FET

ROHM

罗姆

4V Drive Nch MOS FET

文件：97.54 Kbytes 页数：6 Pages

ROHM

罗姆