丝印：T146；Package：SMT3；Interface and switching (30V, 200mA)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET

文件：112.67 Kbytes 页数：4 Pages

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丝印：KL；Package：SMT3；Interface and switching (30V, 200mA)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET

文件：128.06 Kbytes 页数：5 Pages

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Silicon N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON)

文件：44.05 Kbytes 页数：1 Pages

KEXIN

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Interface and switching (30V, 200mA)

1) Low on-resistance.\n2) Fast switching speed.\n3) Low-voltage drive (4V).\n4) Easily designed drive circuits.\n5) Easy to parallel.Structure\n  Silicon N-channel\n  MOSFET ;

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N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON)

文件：1.05582 Mbytes 页数：3 Pages

KEXIN

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Interface and switching (30V, 200mA)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET

文件：128.06 Kbytes 页数：5 Pages

ROHM

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N-Channel MOSFET

文件：1.04724 Mbytes 页数：3 Pages

KEXIN

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N-Channel MOSFET

文件：1.09923 Mbytes 页数：3 Pages

KEXIN

科信电子

N-Channel MOSFET

文件：1.10758 Mbytes 页数：3 Pages

KEXIN

科信电子